Indranil Chatterjee received his M.S. and Ph.D. degrees in electrical engineering from Vanderbilt University, Nashville, TN, USA in 2014. From 2014 to 2016, he worked as a Postdoctoral Scientist in GaN power device development and reliability with the Centre for Device Thermography and Reliability at the University of Bristol, UK. In 2016, he joined the Defence and Space division of Airbus in Friedrichshafen, Germany as a Semiconductor Radiation Effects and Reliability Engineer where he is involved in R&D, design, radiation and reliability analysis of critical electronic systems for earth-observation, navigation, and, telecommunication satellites, and interplanetary probes. His research interests include Radiation Tolerance of Semiconductor Devices, Semiconductor Device Physics, Reliability, and Novel Devices. 

Presently, he is the Airbus eXpert on Semiconductor Technology and Devices, responsible for transnational and trans-divisional activities in semiconductor technology, devices and roadmaps for future aerospace systems. He is also a Guest Faculty at the TUM School of Engineering and Design Technical University of Munich where he teaches a module on space environment and radiation effects in electronics.

Dr. Chatterjee is a Senior Member of IEEE, and has authored and co-authored more than 50 papers in international journals and conferences and has delivered keynotes, and invited talks in US, Asia, Europe, and Australia.