Publications

INVITED TALKS:

• "Satellite-based Quantum Key Distribution", Keynote Speaker, International Conference on Security, Surveillance and Artificial Intelligence (ICSSAI) 2023, Kolkata, India.

• "Single-Event Effects – Basic Mechanisms and Testing of Complex Devices", Short Course Speaker, European Data Handling & Data Processing Conference – EDHPC 2023, Juan-Les-Pins (French Riviera), France, 2023.

• "The Radiation Environment in Space: An Introduction and its Impact on Space Exploration", Keynote Speaker, School of Physics, The University of Melbourne, Melbourne, Australia, 2023.

• "Radiation tolerance for a space system", Invited Speaker, The Australian National University, Sydney, Australia, 2023.

• "Soft Errors – from simple devices to complex systems", Tutorial Speaker, IEEE International Reliability Physics Symposium (IRPS) 2023, Monterey, CA, USA.

• "Radiation Hardness Assurance and Tests for Space Missions – the Airbus way", Invited Speaker, G-RAD(NEXT) Workshop 2022.

• "Total Ionizing Dose Effects in CMOS Devices", Short Course Speaker, School of Space Qualification 2023, University of Wollongong, Australia.

• "EEE Reliability and Qualification for Space", Short Course Speaker, Space Qualification 2022, University of Wollongong, Australia. 

• "Single-Event Effects – Basic Mechanisms and Testing of Complex Devices", Short Course Speaker, IEEE Radiation Effects on Components and Systems (RADECS) 2021, Vienna, Austria.

• "Radiation and Power- Key Constraints of Deep Space Exploration", Invited Speaker, University of Alabama Huntsville, Huntsville, AL, USA, July 2019.

• "Radiation Hardness Assurance", Keynote speaker, RADHARD-Symposium 2018,  Seibersdorf Laboratories , Austria, April 2018.

• "Radiation Effects in Microelectronics", 2017 International Workshop on Reliability and Radiation Effects on Micro and Nano-electronic Devices, Chengdu, China. (invited) 

• “Radiation – A Key Driver for the ESA JUICE Mission”, Indian Institute of Engineering, Science and Technology, Shibpur, December 14, 2016

• “Radiation Effects in Modern Microelectronics”, Institute of Microelectronics, Chinese Academy of Sciences, August 2015 (invited) 

• “Fault Tolerant Device Architectures for Space, Avionics and Critical Ground-based Systems”, Indian Institute of Technology, Gandhinagar, June 2, 2014

 INVITED PUBLICATIONS:

• M. Kuball, I. Chatterjee, et al., “Floating Body Effects in Carbon Doped GaN HEMTs”, 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, Blacksburg, Virginia, USA, Nov. 2015.

• P. Moens, I. Chatterjee, et. al., “Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective”, ECS Transactions, vol. 72, issue 4, pp. 65-76, May 2016.

JOURNAL PUBLICATIONS: (in chronological order)

• H. Jiang, I. Chatterjee et al., "Power-Aware SE Analysis of Different FF Designs at the14/16-nm Bulk FinFET CMOS Technology Node",  IEEE Transactions on Nuclear Science, Vol. 65, Issue 8, pp. 1866-1871, August 2018.

• H. Zhang, I. Chatterjee et al.,  "Effects of TID Irradiation on SE Response of 14/16-nm Bulk FinFET FF Designs", IEEE Transactions on Nuclear Science, Vol. 65, Issue 8, pp. 1928-1934, August 2018..

• M. J. Uren, I. Chatterjee, et. al., “Leaky Dielectric Model for the Suppression of Dynamic Ron Dispersion in Carbon Doped AlGaN/GaN HEMTs”, IEEE IEEE Transactions on Electron Devices, March 2017. 

• I. Chatterjee et al., “Lateral Charge Transport in Carbon-doped Buffer in AlGaN/GaN-on-Si HEMTs”, IEEE Transactions on Electron Devices, Vol. 64, Issue 3, pp. 977-983, January 2017. 

• B. Narasimham, I. Chatterjee et al., “Bias Dependence of Single-Event Upsets in 16-nm FinFET D-Flip-Flops”, IEEE Transactions on Nuclear Science, Vol. 62, Issue 6, pp. 2578-2584, Dec 2015.

• B. L. Bhuva, I. Chatterjee et al., “Multi-Cell Soft Errors at Advanced Technology Nodes”, IEEE Transactions on Nuclear Science, Dec 2015, Vol. 62, Issue 6, pp. 2585-2591, Dec 2015.

• I. Chatterjee et al., “Geometry Dependence of Total-Dose Effects in Bulk FinFETs“, IEEE Transactions on Nuclear Science, Vol. 61, Issue 6, pp. 2951-2958, Dec 2014.

• I. Chatterjee et al., “Impact of Technology Scaling on SRAM Soft Error Rates“, IEEE Transactions on Nuclear Science, Vol. 61, Issue 6, pp. 3512-3518, Dec 2014.

• N. N. Mahatme, I. Chatterjee et al, “Kernel-Based Circuit Partition Approach to Mitigate Combinational Logic Soft Errors”, IEEE Transactions on Nuclear Science, Vol. 61, Issue 6, pp. 3274-3281, Dec 2014.

• I. Chatterjee et al., “Bias Dependence of Total-Dose Effects in Bulk FinFETs“, IEEE Transactions on Nuclear Science, Vol. 60, Issue 6, pp. 4476-4482, Dec 2013. 

• N. N. Mahatme, I. Chatterjee et al “An efficient technique to select logic nodes for single event transient pulse-width reduction”, Elsevier Microelectronics Reliability, Volume: 53, Issue: 1, pp. 114–117, 2013.

• N. N. Mahatme, I. Chatterjee et al, “Experimental Estimation of the Window of Vulnerability for Logic Circuits”, IEEE Transactions on Nuclear Science, vol. 60, Issue 4, pp. 2691-2696, June 2013.

• I. Chatterjee et al., “Influence of User-Controlled Parameters in Alpha Particle-Induced Single-Event Error Rates in Commercial SRAM Cells”, IEEE Transactions on Nuclear Science, Vol. 59 Issue 4, pp. 872-879, Dec 2012.

• I. Chatterjee et al., “Single-Event Charge Collection and Upset in 40 nm Dual- and Triple-Well Bulk CMOS SRAMs”, IEEE Transactions on Nuclear Science, Vol. 58, Issue 6, pp. 2761-2767, Dec 2011. 

• I. Chatterjee et al., “Cost Effective Implementation of a Phono Cardiogram Machine with PC Interface”, IETE Journal of Research, Vol. 54, Issue 6 (2008), p. 396-402.

 CONFERENCE PAPERS/PRESENTATIONS: (in chronological order)

• B. Ray, I. Chatterjee, et al., “RadiationTolerance of 3-D NAND Flash Based Neuromorphic Computing System”, IEEE International Reliability Physics Symposium (IRPS) 2020, Dallas, TX, USA

• L. Xu, I. Chatterjee, et. al., "Single-Event Upset Responses of Dual-and Triple-Well D Flip-Flop Designs in 7-nm Bulk FinFET Technology", IEEE International Reliability Physics Symposium (IRPS) 2019, Monterey, CA, USA.

• H. Zhang, I. Chatterjee et al.,  "Effects of TID Irradiation on SE Response of 14/16-nm Bulk FinFET FF Designs",  IEEE Radiation Effects on Components and Systems (RADECS) 2017, Geneva, Switzerland.

• H. Smith, I. Chatterjee et al., "Comparative Analysis of Unhardened and Hardened Flip-Flops for Low Power Applications in 14/16-nm Bulk FinFET CMOS Technology ", IEEE RADECS 2017,  Geneva, Switzerland.

• I. Chatterjee et al., “From MOSFETs to FinFETs – The Soft Error Story”. IEEE Nuclear and Space Radiation Effects Conference (NSREC) 2017, New Orleans, USA .

• H. Zhang, I. Chatterjee et al., “SEU Responses of Dual- and Triple-Well Designs at the 16-nm FinFET Technology”, IEEE RADECS 2016, Bremen, Germany

• H. Smith, I. Chatterjee et al., “Impact of Particle LET on Sequential Circuit SER for Advanced Technologies”, IEEE RADECS 2016, Bremen, Germany

• W. Robinson, I. Chatterjee et al., “Design-Based Variability in Simulating Single Event Transients“, IEEE RADECS 2016, Bremen, Germany.

• M. Power, I. Chatterjee, et al., “Reverse-biased induced mechanical stress in AlGaN/GaN power diodes”, International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2016.

• S. Karboyan, I. Chatterjee et al., “Dynamic-Ron in Small and Large C-doped AlGaN/GaN-on-Si HEMTs”, International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH) 2016.

• I. Chatterjee et al., “Impact of Buffer Charge on the Reliability of Carbon Doped AlGaN/GaN-on-Si HEMTs”, IEEE International Reliability Physics Symposium (IRPS) 2016.

• N. N. Mahatme, I. Chatterjee et al., “Exploiting Low Power Circuit Topologies for Soft Error Mitigation”, IEEE IRPS 2016.

• P. Moens, I. Chatterjee et al., “Intrinsic reliability assessment of 650V AlGaN/GaN HEMTs: on the impact of space charge limited current, and its implications for HTRB testing”, IEEE International Electron Device Meeting (IEDM) 2015. 

• M. Uren, I. Chatterjee et al., “Electron Trapping in GaN-on-Si Power HEMTs: Impact of Positive Substrate Bias”, International Conference on Nitrided Semiconductors (ICNS) 2015, Beijing, China.

• B. Narasimham, I. Chatterjee et al., “Bias Dependence of Single-Event Upsets in 16-nm FinFET D-Flip-Flops”, IEEE NSREC 2015, Boston, MA, USA.

• B. L. Bhuva, I. Chatterjee et al., “Multi-Cell Soft Errors at Advanced Technology Nodes”, IEEE NSREC 2015, Boston, MA, USA (Finalist­­ for Outstanding Conference Paper Award)

• N. Tam, I. Chatterjee et al., “Multi-Cell Soft Errors at the 16-nm FinFET Technology Node”, IEEE IRPS 2015, Monterey, CA, USA.

• B. Narasimham, I. Chatterjee et al., “Influence of Supply Voltage on the Multi-Cell Upset Soft Error Sensitivity of Dual- and Triple-Well 28-nm CMOS SRAMs”, IEEE IRPS 2015, Monterey, CA, USA.

• I. Chatterjee et al., “Effects of Well-Doping and Layout on Soft-Error Vulnerability for Advanced Technology SRAMs”, IEEE NSREC 2014, Paris, France.

• I. Chatterjee et al., “Geometry Dependence of Total-Dose Effects in Bulk FinFETs”, IEEE NSREC 2014, Paris, France.

• N. N. Mahatme, I. Chatterjee et al., “Power-Aware Mitigation of Combinational Logic Single Event Effects”, IEEE NSREC 2014, Paris, France. 

• N. N. Mahatme, I. Chatterjee et al., “Impact of Technology Scaling on the Combinational Logic Soft Error Rate”, IEEE IRPS 2014, Waikoloa, Hawaii, USA.

• I. Chatterjee et al., “Bias Dependence of Total-Dose Effects in Triple-Well FinFETs”, IEEE NSREC 2013, San Francisco, CA, USA. (Finalist­­ for Outstanding Conference Paper Award)

• I. Chatterjee et al., “Length and Fin Number Dependence of Ionizing Radiation- Induced Degradation in Bulk nMOS FinFETs”, IEEE IRPS 2013, Monterey, CA, USA.

• I. Chatterjee et al., Radiation Response of Backside Illuminated CMOS Imagers”, IEEE RADECS 2012, Biarritz, France.

• I. Chatterjee et al., “Effects of Charge Confinement and Angular Strikes in 40 nm Dual- and Triple-Well Bulk CMOS SRAMs”, IEEE IRPS 2012, Anaheim, CA, USA.

• I. Chatterjee et al., “Impact of Well Contacts on the Single Event Response of Radiation-Hardened 40 nm Flip-flops”, IEEE IRPS 2012, Anaheim, CA, USA.

• I. Chatterjee et al., “Alpha Particle Induced Single-Event Error Rates and Scaling Trends in Commercial SRAM Cells”, IEEE RADECS 2011, Sevilla, Spain.

• I. Chatterjee et al., “Single-Event Charge Collection and Upset in 40 nm Dual- and Triple-Well Bulk CMOS SRAMs”, IEEE NSREC 2011, Las Vegas, CA, USA.

• N. N. Mahatme, I. Chatterjee et al., “Analysis of soft error rates in combinational and sequential logic and implications of hardening for advanced technologies”, IEEE IRPS 2010, Anaheim, CA, USA.

• N. Mahatme, I. Chatterjee et al., “An Efficient Technique to Select Logic Nodes for Single Event Transient Pulse Width Reduction”, IEEE RADECS 2010, Langenfeld, Austria.

• I. Chatterjee et al., “Low Cost Implementation of Phonocardiogram Machine”, National Conference on New Generation Electronics 2008, Calcutta, India (Outstanding Conference Paper Award – Undergraduate)