Nov 2021 - present : Airbus Expert - Semiconductor Technology and Devices, Airbus Defence and Space, Friedrichshafen, Germany.

• Lead R&D on radiation effects and reliability of ultra-deep-submicron devices across Airbus.

• Expert in state-of-the-art semiconductor devices, semiconductor physics and technologies (and failure modes), from classical hi-rel to cutting-edge COTS EEE parts.

• Advise Airbus projects on reliability and radiation performance of discrete, power (including wide bandgap devices), as well as integrated technologies (including ultra deep submicron).

• Electronic and system design, solution maker for electronic or system designers

• Communicate with stakeholders (interfacing position vs large spectrum of executive management, technical, project, and quality management or procurement-commodity interlocutors).

• Support technologies roadmap and strategic R&D in semiconductor radiation effects and reliability to effectively transfer innovation to Airbus designs.

• Transnational mindset and comfortable with multicultural environment.

• Represent Airbus in international working groups or external forums or conference. 

October 2023-present : Guest Faculty - Space Electronics, Chair of Pico and Nano Satellites, and Satellite Constellations TUM School of Engineering and Design Technical University of Munich, Germany.

• Teach a module on space environment and radiation effects

• Hands-on training of space environment modeling software, SEE rate calculations, FASTRAD modeling

June 2016-Nov 2021 : Senior Engineer - Semiconductor Radiation Effects and Reliability, Airbus Defence and Space, Friedrichshafen, Germany.

• Lead R&D on radiation effects and reliability of ultra-deep-submicron devices across Airbus Defence and Space.

• Design support, development, and radiation analysis of critical electronic systems for Earth observation, Navigation, and Science satellites.

• Definition and validation of space radiation environments, and Radiation Hardness Assurance (RHA) requirements for Traditional and New Space programs.

• Selection and approval of active EEE components (including COTS) based on their reliability and radiation performance.

• Advise transnational EEE teams on semiconductor technology qualification, evaluation of COTS components and new technologies (such as GaN and SiC), Root-Cause Failure Analysis (FA), Radiation qualification etc.

• Direct interface with the final customer regarding reliability and radiation effects of semiconductor devices and technology.

• Maintain and develop EEE roadmap for deployment in next generation of satellites.

• Advise space agencies for various semiconductor reliability and radiation related topics.

• Airbus representative on ESA Component Technology Board and ESA Ultra-Deep-Submicron Working Group

October 2014-May 2016: Postdoctoral Research Fellow, Center for Device Thermography and Reliability, University of Bristol, UK.

• Coordination of a cross-functional team (engineers, Ph.D. students and Post-docs) to define projects requirements of industrial and government partners on tight deadlines.

• Development of novel and state-of-the-art electrical methodologies for understanding device behavior and inherent defects in AlGaN/GaN HEMTs for application in commercial, military, and space electronics.

• Development of novel device layouts aimed at understanding reliability concerns in GaN power HEMTs.

• Supervised and mentored Ph.D. students to identify problems and work towards a solution

• Study radiation effects in the key constituent elements of future III-V HEMTs: III-V channels, barriers and buffer structures, high-K dielectrics and their interfaces with III-V channels.

May 2012-August 2012: Graduate Research Intern, Cisco Systems, San Jose, CA, USA

Project: Reliability Information Interchange Format

• Analysis of Radiation-Tolerant Sequential Circuit Elements Designs

• Created foundations on a new error reporting standard known as RIIF

• Factor affecting Radiation Response of Highly Scaled SRAMs 

June 2011-November 2011: International Scholar, IMEC, Belgium

Project: Backside Illuminated CMOS Image Sensors

• Modeling, calibration and performance analysis of Novel Backside-Illuminated(BSI) CMOS Image Sensors

• Total ionizing dose response of BSI image sensors

• Impact of traps on the single-event response of BSI image sensors

• Design of rad-hard image sensors as per the specifications of the European Space Agency 

August 2010 - August 2014: Graduate Research Assistant, Vanderbilt University Institute for Space and Defense  Electronics, Nashville, TN, USA.

• Ph.D. Thesis: Sensitivity Analysis of the Radiation Response of FinFETs

• Effects of geometry and process variations on the radiation response of FinFETs

• Analysis of oxide and interface traps

• Radiation Hardness by Design: Model devices to qualify for critical mission components

• Masters Thesis: Single Event Effects in SRAMs

• Calibrated device modeling of TSMC 40 nm bulk CMOS process

• Identified a new phenomenon called Single-Event Upset Reversal Mechanism in Triple-well MOSFETs through TCAD simulations

• Experimental validation of the new mechanism discovered

August, 2009 - August, 2010: Graduate Teaching Assistant, Vanderbilt University School of Engineering, Nashville, TN, USA.

• Subjects:  “VLSI Design”, “Principles and Modeling of Semiconductor Devices”, “Integrated Circuit Technology and Fabrication”, and “Electrical Circuits”